RTP

RTP


Regular Flux Grown RTP has an electric resistivity as low as 108 Ω·cm, which may exhibit the detrimental electrochromism when subjected to a dc electric field.
RTP crystals with high electrical resistivity (~1011-1012Ω·cm) have been grown successfully using our own proprietary technology. The electrochromism is not observed under a continuous 1000V/mm Z-directed electric field over more than 1000 hours. This RTP crystal has high damage threshold, large effective electro-optic coefficients and lower half-wave voltage. The Q-switch is built utilizing thermally compensated double-crystal designs.

Advantages

High Damage Threshold
No Piezoelectric Ringing
Low Insertion Loss
Thermal Compensating Design
Non-hygroscopic
High Extinction and Contrast Ratio
 

 

 

 Basic Properties

Crystal structure  Orthorhombic 
Cell Parameters  a = 12.96 Å; b =10.56 Å; c =6.49 Å 
Mohs hardness  About 5 
Density  3.6g/cm3 
Melting Point  About 1000˚C 
Thermal Expansion Coefficients  αx=1.01x10-5, αy =1.37x10-5 
αz=-4.17x10-6 
Sellmeier equations  nx2=2.15559 + 0.93307[1-(0.20994/λ)2] - 0.01452λ2
ny2=2.38494 + 0.73603[1-(0.23891/λ)2] - 0.01583λ2
nz2=2.27723 + 1.11030[1-(0.23454/λ)2] - 0.01995λ2 
Thermo-optical coefficients (dλ/dT)  -0.029 nm /˚C
Electro-optic constants (Y-cut) r33=38.5 pm/V
                                      (X-cut)  r33=35 pm/V,r23=12.5 pm/V, r13=10.6 pm/V 
Electrical Resistivity  About 1011-1012 Ω·cm
Static Half Wave Voltage at 1064 nm 4x4x20 mm: 1,600V
  6x6x20 mm: 2,400V
  9x9x20 mm: 3,600V 
Contrast Ratio  >20dB@633nm 

Capability

Common Specification
Growing Orientation  Along Y-axis 
Length Tolerance +0.5 / -0.1mm
Width and Height Tolerance (mm) ±0.1 mm
Parallelism  <30 arc seconds
Perpendicularity  <15 arc minutes
Surface Quality (Scratch-Dig) S/D 20-10
Coating  AR coated